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• W1919496657 abstract "Abstract A charge trapping memory with 2 nm silicon nanoparticles (Si NPs) is demonstrated. A zinc oxide (ZnO) active layer is deposited by atomic layer deposition (ALD), preceded by Al 2 O 3 which acts as the gate, blocking and tunneling oxide. Spin coating technique is used to deposit Si NPs across the sample between Al 2 O 3 steps. The Si nanoparticle memory exhibits a threshold voltage ( V t ) shift of 2.9 V at a negative programming voltage of –10 V indicating that holes are emitted from channel to charge trapping layer. The negligible measured V t shift without the nanoparticles and the good re‐ tention of charges (>10 years) with Si NPs confirm that the Si NPs act as deep energy states within the bandgap of the Al 2 O 3 layer. In order to determine the mechanism for hole emission, we study the effect of the electric field across the tunnel oxide on the magnitude and trend of the V t shift. The V t shift is only achieved at electric fields above 1 MV/cm. This high field indicates that tunneling is the main mechanism. More specifically, phonon‐assisted tunneling (PAT) dominates at electric fields between 1.2 MV/cm < E < 2.1 MV/cm, while Fowler–Nordheim tunneling leads at higher fields ( E > 2.1 MV/cm). (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)" @default.
• W1919496657 created "2016-06-24" @default.
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• W1919496657 date "2014-05-12" @default.
• W1919496657 modified "2023-10-09" @default.
• W1919496657 title "Silicon nanoparticle charge trapping memory cell" @default.
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• W1919496657 doi "https://doi.org/10.1002/pssr.201409157" @default.
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