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• W1919686903 abstract "Gallium arsenide (semiconductor) (GaAs) metal-oxide-semiconductor capacitors with fluorine-incorporated TaHfON as gate dielectric are fabricated by pre- or postdeposition fluorine plasma treatment and their electrical and physical properties are compared with a control sample without the treatment. Among the three devices, the one with postdeposition fluorine treatment exhibits better characteristics: low oxide-charge density (−3.5 × 1012 cm−2), low interface-state density (2.2 × 1012 cm−2eV−1), small flatband voltage (0.7 V), small hysteresis (45 mV), and good capacitance–voltage behavior. These should be attributed to (1) the passivating effects of fluorine atoms on the acceptorlike interface and near-interface traps, and (2) fluorine-induced suppressed growth of unstable Ga and As oxides on the GaAs substrate during postdeposition annealing." @default.
• W1919686903 created "2016-06-24" @default.
• W1919686903 creator A5016821599 @default.
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• W1919686903 creator A5076826015 @default.
• W1919686903 date "2015-07-28" @default.
• W1919686903 modified "2023-10-17" @default.
• W1919686903 title "Passivation of oxide traps in gallium arsenide (semiconductor) metal-oxide-semiconductor capacitor with high-k dielectric by using fluorine incorporation" @default.
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• W1919686903 doi "https://doi.org/10.1116/1.4927483" @default.
• W1919686903 hasPublicationYear "2015" @default.
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