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- W1920436944 abstract "In order to study the electronic properties of the recombination centers responsible for the lightinduced carrier lifetime degradation commonly observed in high-purity boron-doped Czochralski (Cz) silicon, injection-level dependent carrier lifetime measurements are performed on a large number of boron-doped p-type Cz silicon wafers of various resistivities (1 – 31 Ωcm) prior to and after light degradation. The measurement technique used is the contactless quasi-steady state photoconductance method, allowing carrier lifetime measurements over a very broad injection range between 10 and 10 cm. To eliminate all recombination channels not related to the degradation effect, the difference of the inverse lifetimes measured after and before light degradation is evaluated. A detailed analysis of the injection level dependence of the carrier lifetime change using the ShockleyRead-Hall theory shows that the fundamental recombination center created during illumination has an energy level between Ev + 0.35 eV and Ec 0.45 eV and an electron/hole capture time constant ratio between 0.1 and 0.2. This deep-level center is observed in all samples and is attributed to a new type of boron-oxygen complex. Besides this fundamental defect, in some samples an additional shallow-level recombination center at 0.15 eV below Ec or above Ev is found to be activated during light exposure. This second center dominates the light-degraded carrier lifetime only under highinjection conditions and is hence only of minor importance for low-injection operated devices." @default.
- W1920436944 created "2016-06-24" @default.
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- W1920436944 date "1999-01-01" @default.
- W1920436944 modified "2023-09-27" @default.
- W1920436944 title "Electronic properties of the recombination centers responsible for the light-induced carrier lifetime degradation in boron-doped Czochralski silicon" @default.
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