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• W1921307911 abstract "Hydrogenated microcrystalline silicon is of great interest as the intrinsic layer in thin film solar cells. It is generally accepted that optimized cells use an I-layer with a crystalline fraction ranging from 50% to 70%. We report here on the use of fully crystallized layers deposited from SiF 4 /H 2 /Ar gas mixtures. A V OC of 536 mV and a J SC of 25.4 mA/cm 2 have been obtained in PIN solar cells using a fully crystallized intrinsic material. Fourier transform photocurrent spectroscopy measurements show that the films have a very low defect density down to 5.1 × 10 14 cm −3 . The role of H 2 during deposition has been investigated: it is demonstrated that H 2 is needed to remove F by forming HF molecules. When all atomic F has been removed from the plasma, the remaining atomic H can then contribute to μc-Si:H growth." @default.
• W1921307911 created "2016-06-24" @default.
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• W1921307911 date "2014-07-01" @default.
• W1921307911 modified "2023-09-30" @default.
• W1921307911 title "Material and growth mechanism studies of microcrystalline silicon deposited from SiF₄/H₂/Ar gas mixtures" @default.
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• W1921307911 doi "https://doi.org/10.1139/cjp-2013-0606" @default.
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