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- W1921588037 abstract "The effect of gate dopant diffusion on leakage current has been investigated in n <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>+</sup> poly-Si/HfO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> capacitors. The HfO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> films with low gate doping concentration exhibited very low leakage currents, whereas the films with heavy gate doping concentration showed excessive leakage currents. Conducting atomic force microscopy was applied to examine the current images of the HfO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> films showing excessive leakage currents, and evident leakage paths with annular shape were observed. The leakage paths observed in the HfO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2 </sub> films with heavy doping poly-Si gate may be related to the diffusion of the excessive dopant from the n <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>+</sup> poly-Si gate into the HfO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> , particularly through the grain boundaries in the films. This may significantly increase the leakage currents in the n <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>+</sup> poly-Si/HfO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> devices" @default.
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- W1921588037 date "2007-05-01" @default.
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- W1921588037 title "Effect of Gate Dopant Diffusion on Leakage Current in $ hbox{n}^{+}hbox{Poly-Si}/hbox{HfO}_{2}$ and Examination of Leakage Paths by Conducting Atomic Force Microscopy" @default.
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- W1921588037 doi "https://doi.org/10.1109/led.2007.895404" @default.
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