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- W1925119312 abstract "Low energy boron implants between 200 eV and 10 keV have been characterised for the effect of channelling and of pre-amorphisation on the as-implanted profiles. Suitable rapid thermal anneal conditions for a shallow drain formation compatible with a 0.18 /spl mu/m CMOS process were determined. One of these conditions was then used to fabricate PMOS transistors with shallow drain extensions using a 0.18 /spl mu/m flow chart. Transistor characteristics such as threshold voltage, junction leakage and asymmetry were then measured as a function of implanted species and energy, and of gate length." @default.
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- W1925119312 date "2002-11-28" @default.
- W1925119312 modified "2023-09-25" @default.
- W1925119312 title "Characterisation of low energy boron implants and electrical results of submicron PMOS transistors" @default.
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- W1925119312 doi "https://doi.org/10.1109/iit.1998.813815" @default.
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