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• W1925549563 abstract "The energy diagram of RuO 2 /Al‐doped TiO 2 /RuO 2 structures was estimated from the capacitance–voltage and leakage current density–voltage curves. The Al‐doping profile in TiO 2 film was varied by changing position of the atomic layer deposition cycle of Al 2 O 3 during the atomic layer deposition of 9 nm‐thick TiO 2 film. The interface between the TiO 2 film and the RuO 2 electrode containing Al‐doping layer showed a higher Schottky barrier by 0.1 eV compared with the opposite interface without the doping layer. The evolution of various leakage current profiles upon increasing the bias with opposite polarity could be well explained by the asymmetric Schottky barrier. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)" @default.
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• W1925549563 date "2015-07-01" @default.
• W1925549563 modified "2023-10-08" @default.
• W1925549563 title "Asymmetry in electrical properties of Al-doped TiO₂ film with respect to bias voltage" @default.
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• W1925549563 doi "https://doi.org/10.1002/pssr.201510146" @default.
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