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- W1926136072 abstract "We present compact modeling, DC and RF characterization of lateral and vertical nanowire MOSFETs. Lateral tri-gate nanowire devices on InP substrates have demonstrated a maximum g <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>m</sub> =2.95 mS/μm at V <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>DS</sub> =0.5 V, and f <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>T</sub> /f <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>max</sub> =290/350 GHz. Vertical gate-all-around InAs wires integrated on Si substrates have demonstrated g <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>m</sub> =1.35 mS/μm and f <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>T</sub> /f <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>max</sub> =100/155 GHz. We also demonstrate a non-parabolic, ballistic charge/current compact model for rectangular nanowire FETs." @default.
- W1926136072 created "2016-06-24" @default.
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- W1926136072 date "2015-10-01" @default.
- W1926136072 modified "2023-09-26" @default.
- W1926136072 title "High Frequency InGaAs Nanowire MOSFETs" @default.
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- W1926136072 doi "https://doi.org/10.1109/csics.2015.7314508" @default.
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