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- W1926357580 abstract "In order to describe nonlinear distortion behavior precisely, an equivalent resistance model for n/sup -/ source/drain regions of an LDD MOSFET featuring gate bias and drain bias dependence is implemented. Separating the LDD device into an intrinsic MOSFET and two buried channel (BC) MOSFETs, a resistance model has been developed in a physically consistent manner. The proposed resistance model was confirmed using 2D device simulation results and its viability for distortion analysis has been investigated." @default.
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- W1926357580 date "2003-01-20" @default.
- W1926357580 modified "2023-09-23" @default.
- W1926357580 title "A bias dependent source/drain resistance model in LDD MOSFET devices for distortion analysis" @default.
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- W1926357580 doi "https://doi.org/10.1109/icvc.1999.820870" @default.
- W1926357580 hasPublicationYear "2003" @default.
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