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- W1927366387 abstract "pMOSFET performance of high Ge content (~50%) biaxial compressive strained SiGe heterostructure channel pMOSFETs is characterized, and performance between 〈110 〉 and 〈100 〉 channel orientations on a (001) substrate is compared for physical channel lengths down to ~80 nm. Temperature-dependent mobility and velocity are characterized for both channel directions. First, it is shown that high Ge content SiGe-based channels can deliver drive current enhancement over unstrained Si below sub-100-nm channel lengths. Second, it is found that, with a higher Ge content SiGe channel under biaxial compressive strain, there is a difference of drive current between 〈110 〉 and 〈100 〉 channel directions, and the difference increases when temperature is lowered and/or when channel length is scaled down. An external series resistance difference is detected between two channel directions, although it appears to be insufficient to explain all the direction-dependent drive current difference. Channel transport behavior in different channel orientations can be clearly observed with low external source/drain (S/D) series resistance achieved with a millisecond S/D dopant activation anneal process while controlling the thermal budget. Two possibilities have been investigated to understand channel-direction-dependent performance: possible differences in effects of device processing impact between two channel directions and anisotropic transport effects from an anisotropic hole band structure, particularly under biaxial compressive strain in a SiGe channel pseudomorphically grown on a Si substrate." @default.
- W1927366387 created "2016-06-24" @default.
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- W1927366387 date "2011-04-01" @default.
- W1927366387 modified "2023-09-24" @default.
- W1927366387 title "on-State Performance Enhancement and Channel-Direction-Dependent Performance of a Biaxial Compressive Strained $ hbox{Si}_{0.5}hbox{Ge}_{0.5}$ Quantum-Well pMOSFET Along $ langle hbox{110} rangle$ and $langle hbox{100} rangle$ Channel Directions" @default.
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- W1927366387 doi "https://doi.org/10.1109/ted.2011.2105876" @default.
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