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- W1930787018 abstract "The development of GaAs microwave devices and MMICs in NEDI has been introduced and reviewed. The developed MESFETs, PHEMTs, HFETs and HBTs for low noise and power applications have covered the operation frequency range between L and Ka-band. Homo- and hetero-junction MMICs with the gate-length of 0.5 /spl mu/m and beyond are designed by the state-of-the-art CAD tools and manufactured from the well equipped 2 inch and 3 inch GaAs processing lines." @default.
- W1930787018 created "2016-06-24" @default.
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- W1930787018 date "2002-11-28" @default.
- W1930787018 modified "2023-09-25" @default.
- W1930787018 title "GaAs microwave devices and MMICs development in NEDI" @default.
- W1930787018 doi "https://doi.org/10.1109/icmmt.1998.768226" @default.
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