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• W1932452214 endingPage "16053" @default.
• W1932452214 startingPage "16046" @default.
• W1932452214 abstract "Graphene/hexagonal boron nitride (h-BN) heterostructures have attracted a great deal of attention in recent years due to their unique and complementary properties for use in a wide range of potential applications. However, it still remains a challenge to synthesize large-area high quality samples by a scalable growth method. In this work, we present the synthesis of both in-plane and stacked graphene/h-BN heterostructures on Cu foils by sequentially depositing h-BN via ion beam sputtering deposition (IBSD) and graphene with chemical vapor deposition (CVD). Due to a significant difference in the growth rate of graphene on h-BN and Cu, the in-plane graphene/h-BN heterostructures were rapidly formed on h-BN domain/Cu substrates. The large-area vertically stacked graphene/h-BN heterostructures were obtained by using the continuous h-BN film as a substrate. Furthermore, the well-designed sub-bilayered h-BN substrates provide direct evidence that the monolayered h-BN on Cu exhibits higher catalytic activity than the bilayered h-BN on Cu. The growth method applied here may have great potential in the scalable preparation of large-area high-quality graphene/h-BN heterostructures." @default.
• W1932452214 created "2016-06-24" @default.
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• W1932452214 date "2015-01-01" @default.
• W1932452214 modified "2023-10-16" @default.
• W1932452214 title "Synthesis of in-plane and stacked graphene/hexagonal boron nitride heterostructures by combining with ion beam sputtering deposition and chemical vapor deposition" @default.
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• W1932452214 doi "https://doi.org/10.1039/c5nr04490a" @default.
• W1932452214 hasPubMedId "https://pubmed.ncbi.nlm.nih.gov/26371688" @default.
• W1932452214 hasPublicationYear "2015" @default.
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