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- W193387332 abstract "Chemical-Mechanical Polishing (CMP) has emerged as an enabling technology for manufacturing multi-level metal interconnects used in high-density Integrated Circuits (IC). In this work we present extension of CMP from sub-micron IC manufacturing to fabrication of complex surface-micromachined Micro-ElectroMechanical Systems (MEMS). This planarization technique alleviates processing problems associated with fabrication of multi-level polysilicon structures, eliminates design constraints linked with non-planar topography, and provides an avenue for integrating different process technologies. We discuss the CMP process and present examples of the use of CMP in fabricating MEMS devices such as microengines, pressures sensors, and proof masses for accelerometers along with its use for monolithically integrating MEMS devices with microelectronics." @default.
- W193387332 created "2016-06-24" @default.
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- W193387332 date "1996-06-03" @default.
- W193387332 modified "2023-10-18" @default.
- W193387332 title "Application of Chemical-Mechanical Polishing to Planarization of Surface-Micromachined Devices" @default.
- W193387332 doi "https://doi.org/10.31438/trf.hh1996.11" @default.
- W193387332 hasPublicationYear "1996" @default.
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