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- W1936404689 abstract "Recent progress in the growth of strained SiGe epitaxial layers, demonstrating the feasibility of silicon-based heterojunction transistors, is examined. The specific design issues for SiGe HBTs are discussed. These are illustrated by reviewing the experimentally obtained electrical characteristics of recent SiGe-based devices. Analytical and numerical calculations are used to explain the device physics and to assess the potential circuit advantage of SiGe for present and future technologies. Experimental results for a double-polysilicon structure with a non-self-aligned emitter opening are reported. For this type of device the additional degree of freedom available for profile optimization can be employed to enhance f/sub T/, shift the peak f/sub T/ to lower current density, or lower the base sheet resistance. Very good DC operation has been observed at room and low temperature, suggesting improved speed performance over homojunction devices. >" @default.
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- W1936404689 date "2003-01-13" @default.
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- W1936404689 title "Design issues for SiGe heterojunction bipolar transistors" @default.
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- W1936404689 doi "https://doi.org/10.1109/bipol.1989.69460" @default.
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