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• W1938060651 abstract "We report on the deposition of SiC-layers in a newly constructed high-temperature chemical vapor deposition system. With this system SiC-layers are deposited onto tape-casted SiC-ceramic substrates (10/spl times/10 cm/sup 2/) at deposition temperatures ranging from 1200 to 1450/spl deg/C to study the chemical stability, the smoothness, and the electrical resistivity of the SiC-layers. The SiC-layers have a resistivity of 1.6/spl times/10/sup 8/ /spl Omega/cm when boron doping is used to compensate unintended doping. This layer resistivity is sufficiently high to fabricate an integrated series connection on a conductive ceramic substrate." @default.
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• W1938060651 date "2003-05-18" @default.
• W1938060651 modified "2023-09-28" @default.
• W1938060651 title "Silicon carbide barrier layer on ceramic substrates for crystalline silicon thin-film modules with an integrated series connection" @default.
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