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- W194260423 abstract "Defects in GaAsSb crystals grown on (001) InP substrates by molecular beam epitaxy have been investigated by transmission electron microscopy. Three types of structural defects originating from the hetero-interface, i.e., stacking fault tetrahedra, micro-twins, and misfit dislocations are observed. Coarse and fine modulated structures lying along the two equivalent and directions are also present. They are columnar shaped at higher temperature but modulation along the direction occurs at lower temperatures. Furthermore, CuPt-type ordered structures are observed. The ordering occurs equally on two of the four equivalent (111) planes with doubling in periodicity of (111) layers of column V-atoms. The ordering is not perfect and the degree of ordering becomes higher with increasing growth temperature. Based on these results, the generation mechanism of defects and methods for their elimination are discussed." @default.
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- W194260423 date "1990-01-01" @default.
- W194260423 modified "2023-09-26" @default.
- W194260423 title "TEM INVESTIGATION OF DEFECTS IN GaAsSb CRYSTALS GROWN ON (001) InP SUBSTRATES BY MOLECULAR BEAM EPITAXY" @default.
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- W194260423 doi "https://doi.org/10.1016/b978-0-444-88429-9.50024-0" @default.
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