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- W1943702913 abstract "2D materials heterostructures are built by vertical stacking of solution-processed reduced graphene oxide (rGO) film and few-layer MoS2. The Raman and photoluminescence of the MoS2/rGO heterostructures show more significant peak shift compared to individual MoS2 or rGO film. The field-effect transistors (FETs) based on such MoS2/rGO heterostructures show ambipolar behavior in the dark but n-type behavior under illumination. This phenomenon provides a way to investigate the charge transport in valence band of MoS2. Due to charge separation caused by built-in potential at MoS2/rGO interface, the recombination of photoexcited electron–hole pairs is effectively suppressed, leading to high photoresponsivity (≈2.4 × 104 A W−1) and photogain (≈4.7 × 104) of the MoS2/rGO heterostructures in ambient air with modulation of gate bias and drain–source bias." @default.
- W1943702913 created "2016-06-24" @default.
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- W1943702913 date "2015-09-19" @default.
- W1943702913 modified "2023-10-16" @default.
- W1943702913 title "Gate-Tunable Ultrahigh Photoresponsivity of 2D Heterostructures Based on Few Layer MoS<sub>2</sub>and Solution-Processed rGO" @default.
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- W1943702913 doi "https://doi.org/10.1002/aelm.201500267" @default.
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