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• W1948781285 abstract "In this article, we evaluate the lithographic performance of a newly developed three-component chemically amplified negative resist in the sub-100-nm region which utilizes polyhydroxystyrene partially protected by t -Boc groups as a base polymer; alicyclic-bromides with a ketonic group as a highly efficient acid generator; hexamethoxymethylmelamine as a cross-linker; and basic added compounds. The resist will extend the feasibility of synchrotron radiation lithography for LSI fabrication down to the 70 nm line and space patterns with an acceptable sensitivity, a large exposure latitude, and good performance in LSI processes." @default.
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• W1948781285 date "1999-12-01" @default.
• W1948781285 modified "2023-09-23" @default.
• W1948781285 title "Lithographic Performance of a Chemically Amplified Resist Developed for Synchrotron Radiation Lithography in the Sub-100-nm Region" @default.
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• W1948781285 doi "https://doi.org/10.1143/jjap.38.7090" @default.
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