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- W1948908552 abstract "We can obtain the specific other semipolar GaN such as {11-22} and {10-13} on foreign substrates whereas GaN with other orientations, for example {20-21} GaN, is not able to grown on any foreign substrates. When GaN is grown from a c-plane-like sidewall of patterned sapphire substrates (PSSs), GaN with a definite orientation can be grown according to the crystal relationship between GaN and sapphire. Thus, PSS technique is useful for obtaining large size GaN substrates with any orientations you need. In this study, we report on the growth of a 2 inch size semi-polar {20-21} GaN layer on an {22-43}-plane PSS, and purple light-emitting diodes (LEDs) fabricated on a {20-21} GaN substrate, which is grown by hydride vapor phase epitaxy (HVPE)." @default.
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- W1948908552 date "2014-01-01" @default.
- W1948908552 modified "2023-10-16" @default.
- W1948908552 title "S1660106 Growth of Semipolar GaN and Application to Light-Emitting Diodes" @default.
- W1948908552 doi "https://doi.org/10.1299/jsmemecj.2014._s1660106-" @default.
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