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- W1950030268 abstract "An investigation has been carried out on InAlAs/InGaAs HEMTs dedicated to monolithic optoelectronic integrated circuits (OEICs) for receiver as well as transmitter applications. The monolithic integration on InP semi-insulating substrates can be penalized by several parasitic effects related to trapping/detrapping mechanisms originated in the substrate and/or buffer layers. These parasitics have been studied in three MBE-grown HEMT structures, one of them previously demonstrated as efficient in the reduction of the gate current induced by an impact ionisation mechanism developing in the InGaAs channel layer." @default.
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- W1950030268 date "2002-11-22" @default.
- W1950030268 modified "2023-09-26" @default.
- W1950030268 title "Detrimental effects limiting the performances of InP HEMT-based OEICs" @default.
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- W1950030268 doi "https://doi.org/10.1109/iciprm.1997.600079" @default.
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