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• W1952951874 abstract "This paper describes the structural and electrical properties of thin films grown through atomic layer deposition onto Ge substrates over a wide deposition temperature range . From grazing-incidence X-ray reflectivity and X-ray photoelectron spectroscopy, we found that increasing the deposition temperature improved the film density and its dielectric stoichiometry; nevertheless, dielectric intermixing between main and interfacial appeared at temperatures above , along with degradation of the interface. Accordingly, a relatively large gate leakage current and a high density of interfacial states were observed as a result of deterioration of the entire structure at higher deposition temperatures. In addition, although subsequent high-temperature processing at in a ambient could relieve the oxygen-excessive behavior further, i.e., to provide a more stoichiometric film, the accompanying volatilization close to the dielectric interface caused greater damage to the electrical performance. Only forming gas annealing (, 1:10) at low temperature improved the capacitance–voltage characteristics of the structure, in terms of providing a lower value of (ca. ), a lower value of , and a reduced hysteresis width." @default.
• W1952951874 created "2016-06-24" @default.
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• W1952951874 date "2008-01-01" @default.
• W1952951874 modified "2023-10-18" @default.
• W1952951874 title "Characteristics of Atomic-Layer-Deposited Al[sub 2]O[sub 3] High-k Dielectric Films Grown on Ge Substrates" @default.
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• W1952951874 doi "https://doi.org/10.1149/1.2965495" @default.
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