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- W1956914876 abstract "The incorporation of low concentrations of carbon (<10/sup 20/ cm/sup -3/) into the SiGe region of a heterojunction bipolar transistor (HBT) can significantly suppress boron outdiffusion caused by subsequent processing steps. This effect can be described by coupled diffusion of carbon atoms and Si point defects. We discuss the increase in performance and process margins in SiGe heterojunction bipolar technology by adding carbon. SiGe:C HBTs demonstrate excellent static parameters, exceeding the performance of state-of-the-art SiGe HBTs. C also enhances the high frequency performance, because it allows one to use a high B doping level in a very thin SiGe base layer without outdiffusion from SiGe, even if applying post-epitaxial implants and anneals. Finally, we demonstrate the first modular integration of SiGe:C HBTs into a 0.25 /spl mu/m, epi-free, dual-gate CMOS platform." @default.
- W1956914876 created "2016-06-24" @default.
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- W1956914876 date "2002-11-11" @default.
- W1956914876 modified "2023-09-25" @default.
- W1956914876 title "Carbon doped SiGe heterojunction bipolar transistor module suitable for integration in a deep submicron CMOS process" @default.
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- W1956914876 doi "https://doi.org/10.1109/apmc.2000.925943" @default.
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