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- W196218466 abstract "Ionized cluster beam (ICB) deposition has been used to form thin films of metals, insulators, semiconductors and organic materials which have unique characteristics when compared to films formed using other techniques. Atomic-scale observations of the early stage of metal film growth have shown the presence of islands at the very earliest stages of film deposition by ICB method. The introduction of a small number of clusters containing a large number of adatoms, can dramatically alter the nucleation and growth of thin films and produce films with very different characteristics. For the film formation by ICB, emphasis is given to the formation of high-quality, epitaxial metallic films. In addition, several applications of the films with respect to electronic and optical devices are discussed with emphasis on the special characteristics of the films." @default.
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- W196218466 date "1994-01-01" @default.
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- W196218466 title "Ionized cluster beam techniques for film formation" @default.
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- W196218466 doi "https://doi.org/10.1016/b978-0-444-81994-9.50031-2" @default.
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