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- W19625444 abstract "New thin film epitaxial growth methods have been developed which provide the possibility of accurately controlling thicknesses and doping profiles. These methods can be applied to 2DEG structures having a modulation doped single heterojunction, and those having an asymmetric quantum well doped with an atomic layer profile.KeywordsMolecular Beam EpitaxyGaAs LayerFlow Rate RegionMOCVD MethodSingle HeterojunctionThese keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves." @default.
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- W19625444 date "1986-01-01" @default.
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- W19625444 title "New Epitaxial Growth Methods and Their Application to Quantum Wells and 2DEG Structures" @default.
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- W19625444 doi "https://doi.org/10.1007/978-3-662-02470-6_1" @default.
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