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- W1963485612 abstract "Chemical state analysis by a combination of X-ray photoelectron spectroscopy (XPS) and X-ray absorption spectroscopy (XAS) using synchrotron radiation is performed for β-FeSi2 single crystals and homoepitaxial β-FeSi2 films. The Si 2p XPS and Fe L-edge XAS spectra imply that the annealing at 1173 K to remove native oxide layers on the crystal induces the formation of FeSi in the surface. The formation of FeSi is also confirmed by Si K-edge XAS analysis. For the homoepitaxial β-FeSi2 films grown on the crystals, the Si K-edge XAS spectra indicate that structurally homogeneous β-FeSi2 films can be grown on the β-FeSi2 single crystals when the substrate temperatures of 973 and 1073 K are applied for molecular beam epitaxy (MBE). Consequently, it is indicated that the combination of XPS and XAS using synchrotron radiation is a useful tool to clarify chemical states of β-FeSi2 single crystals and homoepitaxial β-FeSi2 films, which is important to reveal optimized growth conditions of homoepitaxial films." @default.
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- W1963485612 date "2011-01-01" @default.
- W1963485612 modified "2023-10-02" @default.
- W1963485612 title "Spectroscopic characterization of β-FeSi2 single crystals and homoepitaxial β-FeSi2 films by XPS and XAS" @default.
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- W1963485612 doi "https://doi.org/10.1016/j.apsusc.2010.10.097" @default.
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