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• W1963515203 abstract "The aluminum nitride (AlN) thin film has been investigated for using in pH-ISFET (ion-sensitive field-effect transistor) devices. The AlN thin film was used as the sensitive membrane for simulating and analyzing the pH sensing properties. According to the simulation, we find that the AlN/SiO 2 gate ISFET has high pH sensitivity and has a linear response for the current–voltage ( I – V ) and capacitance–voltage ( C – V ) curves. In the simulation, the pH sensitivity is about 52–59.8 mV/pH for adapting in all testing solutions (pH=1–14). In addition, in the experiment, the I – V and C – V curves of AlN/SiO 2 gate ISFET were also measured and the pH-sensing property was discussed in the different buffer solutions." @default.
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• W1963515203 date "2001-10-01" @default.
• W1963515203 modified "2023-10-18" @default.
• W1963515203 title "Simulation and Experimental Study of the pH-Sensing Property for AlN Thin Films" @default.
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• W1963515203 doi "https://doi.org/10.1143/jjap.40.5900" @default.
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