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• W1963522087 abstract "Abstract Positron lifetime technique and photoluminescence (PL) were employed to study the vacancy type defects in p-type Zn-doped and undoped GaSb samples. In the positron lifetime study, Ga vacancy related defect was identified in these materials and it was found to anneal out at temperature of about 350°C. For the PL measurement on the as-grown undoped sample performed at 10K, a transition peak having a photon energy of about 777meV was observed. This transition peak was observed to disappear after a 400°C annealing. Our results is consistent with the general belief that the 777meV transition is related to the VGaGaSb defect, which is the proposed residual acceptor of GaSb." @default.
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• W1963522087 date "2001-01-01" @default.
• W1963522087 modified "2023-10-01" @default.
• W1963522087 title "Gallium vacancy in GaSb studied by positron lifetime spectroscopy and photoluminescence" @default.
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• W1963522087 doi "https://doi.org/10.1557/proc-692-h9.5.1" @default.
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