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- W1963548382 abstract "With the optimized raised source/drain (S/D) structure to avoid the current crowding effect and the heavily in situ Si-doped (1.5 × 1019 cm−3) in the S/D region with the implant-free process, we demonstrate the outstanding on-state performance and ultra-low S/D resistance (RSD) of 220 Ω µm in indium gallium arsenide (In0.53Ga0.47As) quantum-well (QW) metal–oxide–semiconductor field-effect transistors (MOSFETs). A device with gate length (Lg) = 1 µm exhibits saturation drain current (ID,sat) = 3.1 × 10−4 A µm−1 and peak transconductance (gm) = 866 µS µm−1. The optimized raised S/D thickness to balance the trade-off between the current crowding effect and the intrinsic resistance increase is investigated. On the other hand, the implant-free and gate-last process with low thermal budget process also lead to high-quality high-κ gate stack and the possibility of integration." @default.
- W1963548382 created "2016-06-24" @default.
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- W1963548382 date "2013-09-10" @default.
- W1963548382 modified "2023-10-16" @default.
- W1963548382 title "Experimental demonstration for ultra-low on-resistance in raised source/drain In0.53Ga0.47As QW-MOSFETs with implant-free process" @default.
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- W1963548382 doi "https://doi.org/10.1088/0022-3727/46/39/395101" @default.
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