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• W1963549097 abstract "Selective MOVPE of a (1 1 2¯ 0) a-plane GaN was attempted on a patterned (1 1 0)Si substrate. The growth of GaN was initiated on a (1¯ 1 1) side wall of a (1 1 0)Si substrate which was prepared by KOH anisotropic etching. Growth processes and the propagation/annihilation of defects were investigated as a function of growth temperature and the pressure. A dark spot density as low as 3×107 cm−2 was achieved by the specific low-pressure growth. A smooth surface (AFM RMS value of 0.25 nm) was achieved by the high-pressure growth conditions." @default.
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• W1963549097 date "2008-11-01" @default.
• W1963549097 modified "2023-10-14" @default.
• W1963549097 title "Growth of non-polar (112¯0)GaN on a patterned (110)Si substrate by selective MOVPE" @default.
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• W1963549097 doi "https://doi.org/10.1016/j.jcrysgro.2008.08.059" @default.
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