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- W1963559001 abstract "Junctions of CuInSe2/CdS have been investigated using an admittance spectroscopy technique to obtain information on electrically active states in CuInSe2. The junctions studied were fabricated using electrodeposited p-type CuInSe2 films. The admittance experiments were carried out over a temperature range from 80 to 300 K with a frequency range from 1 to 100 kHz. In devices fabricated using CuInSe2 films with an In/Cu ratio of 1.10, peaks were observed in the conductance-temperature curves with an activation energy of about 50 meV. Characteristic peaks with an activation energy of about 160 meV were found in the devices fabricated using CuInSe2 films with an In/Cu ratio of about 1.25." @default.
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- W1963559001 date "1988-07-15" @default.
- W1963559001 modified "2023-09-27" @default.
- W1963559001 title "Investigation of electrodeposited CuInSe2 films by admittance spectroscopy" @default.
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- W1963559001 doi "https://doi.org/10.1063/1.341920" @default.
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