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• W1963564105 startingPage "3938" @default.
• W1963564105 abstract "In this work we show that the temperature and the applied cooling rate during a platinum diffusion process strongly influence the electrical conductivity in weakly phosphorus doped silicon. Diffusions were done in the range of 800–950°C for several hours. Spreading resistance profile analyses clearly show an n-type to p-type conversion under the surface when samples are slowly cooled (5°C/min). Only a compensation of the phosphorus donors is observed when samples are quenched. This mechanism is reversible. Five Pt related deep levels, including the acceptor level at 0.23 eV from the conduction band, are observed. One of them is located at 0.427 eV from the valence band and can be related to the acceptor state at the origin of the type conversion mechanism. This acceptor state can be associated with a complex defect based on the association of a substitutional Pt atom with interstitial atoms (Pt, O) or intrinsic point defects." @default.
• W1963564105 created "2016-06-24" @default.
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• W1963564105 date "2001-06-01" @default.
• W1963564105 modified "2023-09-25" @default.
• W1963564105 title "Influence of the Applied Cooling Rate on the Type Conversion of Platinum Diffused N-Type Silicon" @default.
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• W1963564105 doi "https://doi.org/10.1143/jjap.40.3938" @default.
• W1963564105 hasPublicationYear "2001" @default.
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