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• W1963568561 startingPage "5806" @default.
• W1963568561 abstract "The role of disorder in the metal-insulator transition in impurity bands in semiconductors is examined by means of a random, one-body, tight-binding Hamiltonian with pure off-diagonal disorder. A homomorphic cluster coherent potential approximation is used to calculate the average Green's function and the $L(E)$ criterion is employed to study the localization of electron states. An Anderson transition is found to take place as the impurity concentration reaches a critical value given approximately by ${n}_{c}^{frac{1}{3}}{ensuremath{alpha}}_{B}^{*}ensuremath{approx}0.16$." @default.
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• W1963568561 date "1981-11-15" @default.
• W1963568561 modified "2023-10-18" @default.
• W1963568561 title "Off-diagonal disorder and the metal-insulator transition in impurity bands in semiconductors" @default.
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• W1963568561 doi "https://doi.org/10.1103/physrevb.24.5806" @default.
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