FRINK Linked Data Fragments server

Matches in SemOpenAlex for { <https://semopenalex.org/work/W1963570525> ?p ?o ?g. }

• W1963570525 endingPage "2654" @default.
• W1963570525 startingPage "2652" @default.
• W1963570525 abstract "The ohmic contact formation of Al/Ti on AlGaN/GaN heterostructure field effect transistors (HFETs) with and without Si implantation was investigated. Direct implantation and implantation through an AlN capping layer were studied. Compared to implantation through AlN, direct implantation is more effective in reducing the contact resistance. An Al(200 Å)/Ti(1500 Å) bilayer structure, called the “advancing” metallization, was used in this investigation to take advantage of consuming nearly all the top AlGaN layers for easy carrier access to the GaN layer underneath. Combining the direct implantation and the advancing metallization, low contact resistance of the order of 0.25 Ω mm (∼5.6×10−6 Ω cm2) can be readily obtained on HFET structures with an AlGaN layer about 340 Å thick and with an Al fraction of at least 22%." @default.
• W1963570525 created "2016-06-24" @default.
• W1963570525 creator A5005494521 @default.
• W1963570525 creator A5056479722 @default.
• W1963570525 creator A5067496466 @default.
• W1963570525 creator A5078776640 @default.
• W1963570525 creator A5090236053 @default.
• W1963570525 date "1999-05-03" @default.
• W1963570525 modified "2023-10-14" @default.
• W1963570525 title "Low resistance ohmic contacts on AlGaN/GaN structures using implantation and the “advancing” Al/Ti metallization" @default.
• W1963570525 cites W1972637482 @default.
• W1963570525 cites W1979203729 @default.
• W1963570525 cites W2004588310 @default.
• W1963570525 cites W2011934317 @default.
• W1963570525 cites W2015424469 @default.
• W1963570525 cites W2023296161 @default.
• W1963570525 cites W2024452675 @default.
• W1963570525 cites W2042149909 @default.
• W1963570525 cites W2060810825 @default.
• W1963570525 cites W2068276858 @default.
• W1963570525 cites W2069363052 @default.
• W1963570525 cites W2083941649 @default.
• W1963570525 cites W2116356548 @default.
• W1963570525 doi "https://doi.org/10.1063/1.123927" @default.
• W1963570525 hasPublicationYear "1999" @default.
• W1963570525 type Work @default.
• W1963570525 sameAs 1963570525 @default.
• W1963570525 citedByCount "74" @default.
• W1963570525 countsByYear W19635705252012 @default.
• W1963570525 countsByYear W19635705252013 @default.
• W1963570525 countsByYear W19635705252014 @default.
• W1963570525 countsByYear W19635705252016 @default.
• W1963570525 countsByYear W19635705252018 @default.
• W1963570525 countsByYear W19635705252019 @default.
• W1963570525 countsByYear W19635705252020 @default.
• W1963570525 countsByYear W19635705252022 @default.
• W1963570525 countsByYear W19635705252023 @default.
• W1963570525 crossrefType "journal-article" @default.
• W1963570525 hasAuthorship W1963570525A5005494521 @default.
• W1963570525 hasAuthorship W1963570525A5056479722 @default.
• W1963570525 hasAuthorship W1963570525A5067496466 @default.
• W1963570525 hasAuthorship W1963570525A5078776640 @default.
• W1963570525 hasAuthorship W1963570525A5090236053 @default.
• W1963570525 hasConcept C119599485 @default.
• W1963570525 hasConcept C123671423 @default.
• W1963570525 hasConcept C127413603 @default.
• W1963570525 hasConcept C138230450 @default.
• W1963570525 hasConcept C145148216 @default.
• W1963570525 hasConcept C165801399 @default.
• W1963570525 hasConcept C171250308 @default.
• W1963570525 hasConcept C172385210 @default.
• W1963570525 hasConcept C178790620 @default.
• W1963570525 hasConcept C185592680 @default.
• W1963570525 hasConcept C189278905 @default.
• W1963570525 hasConcept C192157962 @default.
• W1963570525 hasConcept C192562407 @default.
• W1963570525 hasConcept C2779227376 @default.
• W1963570525 hasConcept C41625074 @default.
• W1963570525 hasConcept C41823505 @default.
• W1963570525 hasConcept C49040817 @default.
• W1963570525 hasConcept C55493867 @default.
• W1963570525 hasConcept C79794668 @default.
• W1963570525 hasConceptScore W1963570525C119599485 @default.
• W1963570525 hasConceptScore W1963570525C123671423 @default.
• W1963570525 hasConceptScore W1963570525C127413603 @default.
• W1963570525 hasConceptScore W1963570525C138230450 @default.
• W1963570525 hasConceptScore W1963570525C145148216 @default.
• W1963570525 hasConceptScore W1963570525C165801399 @default.
• W1963570525 hasConceptScore W1963570525C171250308 @default.
• W1963570525 hasConceptScore W1963570525C172385210 @default.
• W1963570525 hasConceptScore W1963570525C178790620 @default.
• W1963570525 hasConceptScore W1963570525C185592680 @default.
• W1963570525 hasConceptScore W1963570525C189278905 @default.
• W1963570525 hasConceptScore W1963570525C192157962 @default.
• W1963570525 hasConceptScore W1963570525C192562407 @default.
• W1963570525 hasConceptScore W1963570525C2779227376 @default.
• W1963570525 hasConceptScore W1963570525C41625074 @default.
• W1963570525 hasConceptScore W1963570525C41823505 @default.
• W1963570525 hasConceptScore W1963570525C49040817 @default.
• W1963570525 hasConceptScore W1963570525C55493867 @default.
• W1963570525 hasConceptScore W1963570525C79794668 @default.
• W1963570525 hasIssue "18" @default.
• W1963570525 hasLocation W19635705251 @default.
• W1963570525 hasOpenAccess W1963570525 @default.
• W1963570525 hasPrimaryLocation W19635705251 @default.
• W1963570525 hasRelatedWork W1965890915 @default.
• W1963570525 hasRelatedWork W1975027344 @default.
• W1963570525 hasRelatedWork W1977156920 @default.
• W1963570525 hasRelatedWork W2017076333 @default.
• W1963570525 hasRelatedWork W2051353231 @default.
• W1963570525 hasRelatedWork W2095133813 @default.
• W1963570525 hasRelatedWork W2221906605 @default.
• W1963570525 hasRelatedWork W2772756494 @default.
• W1963570525 hasRelatedWork W2991595798 @default.
• W1963570525 hasRelatedWork W3015744687 @default.
• W1963570525 hasVolume "74" @default.
• W1963570525 isParatext "false" @default.
• W1963570525 isRetracted "false" @default.

• next