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- W1963575422 abstract "Using the empirical tight binding method with a sp3s* basis for the first neighbour interactions and only p–p interactions for the second neighbours, we calculated the optical properties near the fundamental gap of cubic GaxAl1–xN alloys for x<0.33 grown on a substrate whose lattice constant varies from the lattice constant of cubic AlN to GaN. We found that the spectra of the fully relaxed alloy have a tail with onset energy at the indirect gap of AlN and an edge at the direct gap of the alloy which follows the Vegard's law within 0.1 eV. The maximum of band gap for each alloy composition is found for a substrate with the lattice constant of the fully relaxed alloy. When the substrate composition is such that induces negative tetragonal strain on the alloy (εxx<0) the energy band gap is mainly affected by the alloy composition while for εxx>0 the alloy composition has a limited effect. The total effect of substrate and alloy composition in the calculated range on the band gap can be as much as 0.4 eV and is mainly due to the valence band shift as the conduction band is only slightly affected by the substrate or the alloy composition. This band gap change is adequate to explain the experimentally observed double photoluminescence peak of open quantum dots. The energy separation of the double peak is 0.1 eV and one peak can be attributed to the tetragonically strained wetting layer and the other to the fully relaxed quantum dots. Furthermore the present results can be used to estimate any possible stoichiometric inhomogeneity and help design structures with specific energies for the pair of peaks. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)" @default.
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- W1963575422 date "2008-08-01" @default.
- W1963575422 modified "2023-09-27" @default.
- W1963575422 title "Effect of strain and alloy composition inhomogeneity on the electronic and optical properties of III-nitride semiconductors" @default.
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- W1963575422 doi "https://doi.org/10.1002/pssc.200778932" @default.
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