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- W1963585543 abstract "We investigated structures and phase transformation kinetics of (Ge1Sb2Te4)0.9(Sn1Bi2Te4)0.1 alloy mixture and its application for the phase change random access memory device. As-sputtered (Ge1Sb2Te4)0.9(Sn1Bi2Te4)0.1 thin film forms crystalline fcc phase. Meanwhile, we could obtain amorphous RESET state and crystalline SET state reproducibly by using appropriate voltage pulse conditions in device structure. We demonstrate that the minimum time for SET operation of phase change random access memory device with (Ge1Sb2Te4)0.9(Sn1Bi2Te4)0.1 goes down to 20 ns, which is much smaller than 100 ns for device with Ge1Sb2Te4. The accelerated SET operation of the device with (Ge1Sb2Te4)0.9(Sn1Bi2Te4)0.1 is interpreted to originate from reduced bond strength in comparison to pure Ge1Sb2Te4." @default.
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- W1963585543 date "2007-09-07" @default.
- W1963585543 modified "2023-10-18" @default.
- W1963585543 title "High Speed Phase Change Random Access Memory with (Ge1Sb2Te4)0.9(Sn1Bi2Te4)0.1Complete Solid Solution" @default.
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- W1963585543 doi "https://doi.org/10.1143/jjap.46.5719" @default.
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