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• W1963618655 abstract "An efficient and mild method to synthesize high-purity hexagonal GaN powder using NH4I as a catalyst was developed. The method makes it possible to use Ga metal for ammonothermal crystal growth of GaN at a rate of 20 μm per day, which is comparable to its growth rate using polycrystalline GaN grown by hydride vapor phase epitaxy as a nutrient." @default.
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• W1963618655 date "2012-01-01" @default.
• W1963618655 modified "2023-09-27" @default.
• W1963618655 title "Powder synthesis and ammonothermal crystal growth of GaN from metallic Ga in the presence of NH4I" @default.
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• W1963618655 doi "https://doi.org/10.1039/c2ce06669f" @default.
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