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- W1963635285 abstract "Far-infrared reflectivity measurements have been carried out from ensuremath{sim}40 to 320 ${mathrm{cm}}^{ensuremath{-}1}$ on a ${mathrm{Pb}}_{0.88}$${mathrm{Sn}}_{0.12}$$mathrm{Te}$ epitaxial film of low carrier concentration ($pensuremath{sim}{10}^{16}$ ${mathrm{cm}}^{ensuremath{-}3}$) on a high-carrier-density ($pensuremath{sim}{10}^{18}$ ${mathrm{cm}}^{ensuremath{-}3}$) ${mathrm{Pb}}_{0.78}$${mathrm{Sn}}_{0.22}$Te substrate. The reflectivity data were analyzed using a two-oscillator dielectric function including free-carrier and phonon linewidths. An upper bound for the LO-phonon frequency was determined to be 115.7 ${mathrm{cm}}^{ensuremath{-}1}$ at room temperature and 113.5 ${mathrm{cm}}^{ensuremath{-}1}$ at liquid-${mathrm{N}}_{2}$ temperature. Other parameters obtained were the phonon linewidth $ensuremath{gamma}=19$ ${mathrm{cm}}^{ensuremath{-}1}$ at room temperature and 12 ${mathrm{cm}}^{ensuremath{-}1}$ at liquid-${mathrm{N}}_{2}$ temperature, and the substrate free-carrier linewidth $ensuremath{nu}=81$ ${mathrm{cm}}^{ensuremath{-}1}$ at room temperature and ensuremath{sim}70 ${mathrm{cm}}^{ensuremath{-}1}$ at liquid-${mathrm{N}}_{2}$ temperature. An analysis of the oscillatory behavior of the reflectivity at frequencies above the highest plasmon-phonon mode permitted the determination of the spatial variation of carrier concentration in the region of the film-substrate interface." @default.
- W1963635285 created "2016-06-24" @default.
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- W1963635285 date "1976-03-15" @default.
- W1963635285 modified "2023-09-26" @default.
- W1963635285 title "Study of the dielectric function of PbSnTe epitaxial film by far-infrared reflectivity" @default.
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- W1963635285 doi "https://doi.org/10.1103/physrevb.13.2540" @default.
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