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• W1963649162 abstract "A one-dimensional model of filament growth in conductive-bridge memory cells is presented, in which ions are thermally excited from the anode surface into the electrolyte, pulled by the electric field through a periodic series of wells and reduced at the cathode to form a metallic filament. The voltage, temperature, and thickness dependencies of the time required to program a cell are calculated, and material parameters for Ag/GeS2/W cells are obtained by comparison to experiment. The relation of the model to recent observations of quantized conductance is highlighted, as is the need for further study of the Ag/GeS2 interface." @default.
• W1963649162 created "2016-06-24" @default.
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• W1963649162 date "2011-08-08" @default.
• W1963649162 modified "2023-09-23" @default.
• W1963649162 title "One-dimensional model of the programming kinetics of conductive-bridge memory cells" @default.
• W1963649162 cites W1970255269 @default.
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• W1963649162 doi "https://doi.org/10.1063/1.3623485" @default.
• W1963649162 hasPublicationYear "2011" @default.
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