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- W1963650863 abstract "Good-optical-quality, thick InxGa1−xN films with high In content were grown using a homemade two-heater metal-organic chemical vapor deposition system. By varying the growth temperature, it was found that the In composition of the InGaN epilayer varied from 18 to 59% as the substrate temperature decreased from 750 to 625 °C. Our results show that the optical properties in terms of the emission peak wavelength and linewidth are uniformly distributed throughout the entire 2 in. wafer for the x=0.40 InGaN sample. The resultant mean peak wavelength and FWHM are 808±6 nm and 229±18 meV, respectively, at 18 K. In addition, for the InGaN film grown at 625 °C, a noticeable decrease in the In composition occurred when the ceiling temperature was >800 °C, indicative of the occurrence of parasitic reactions in the gas phase." @default.
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- W1963650863 date "2013-11-01" @default.
- W1963650863 modified "2023-10-18" @default.
- W1963650863 title "Growth of optical-quality, uniform In-rich InGaN films using two-heater metal-organic chemical vapor deposition" @default.
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- W1963650863 doi "https://doi.org/10.1016/j.jcrysgro.2013.07.030" @default.
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