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• W1963657060 abstract "We have studied silicon nitride thin films deposited by hot-wire chemical vapor deposition as a function of the substrate temperature and hydrogen dilution. We found that adding H2 to the process significantly enhances silicon nitride film deposition. High-quality films can be grown at low substrate temperatures (<350 °C). At optimized conditions, a 500-Å-thick silicon nitride film gives a nearly 100% surface coverage on a 100 nm scale object. H dilution dramatically increases the NH2 radicals in the process and leads to conformal films." @default.
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• W1963657060 date "2004-01-19" @default.
• W1963657060 modified "2023-09-27" @default.
• W1963657060 title "Conformal thin-film silicon nitride deposited by hot-wire chemical vapor deposition" @default.
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• W1963657060 doi "https://doi.org/10.1063/1.1640803" @default.
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