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- W1963660468 abstract "Multi-sheet InGaN/GaN quantum dots (QDs) were grown successfully by surface passivation processing and low-temperature growth in metalorganic chemical vapor deposition. This method based on the principle of increasing the energy barrier of adatom hopping by surface passivation and low-temperature growth, is quite different from present methods. The InGaN quantum dots in the first layer of about 40-nm-wide and 15-nm-high grown by this method were revealed by atomic force microscopy. The InGaN QDs in upper layer grew bigger. To our knowledge, the current–voltage characteristics of multi-sheet InGaN/GaN QDs were measured for the fist time. Two kinds of resonance-tunneling-current features were observed which were attributed to the low-dimensional localization effect. Some current peaks only appeared in positive voltage for sample due to the non-uniformity of the QDs in the structure." @default.
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- W1963660468 date "2002-08-01" @default.
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- W1963660468 title "The structure and current–voltage characteristics of multi-sheet InGaN quantum dots grown by a new multi-step method" @default.
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- W1963660468 doi "https://doi.org/10.1016/s0022-0248(02)01390-8" @default.
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