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- W1963697832 abstract "La gravure en phase vapeur est utilisee avec la lithographie par faisceau d'ions sous masque pour fabriquer des dispositifs ayant des dimensions submicrometriques. Une nouvelle technologie autoalignee donne des MESFET en GaAs avec des grilles de longueur 0,15 a 0,27 μm et une nouvelle technique d'amincissement produit des colonnes en GaAs de largeur inferieure a 10 nm. La gravure en phase vapeur sous stencil donne des largeurs de trait de 60 nm" @default.
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- W1963697832 date "1988-06-01" @default.
- W1963697832 modified "2023-10-18" @default.
- W1963697832 title "Submicrometer Structures Fabricated by Masked Ion Beam Lithography and Dry Etching" @default.
- W1963697832 doi "https://doi.org/10.1149/1.2096046" @default.
- W1963697832 hasPublicationYear "1988" @default.
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