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- W1963724805 abstract "Thin film transistors (TFTs) have been fabricated in an ultra-high vacuum compatible integrated processing system with on-line surface analysis diagnostics - Auger electron spectroscopy (AES) and reflection high energy electron diffraction (RHEED). This paper deals with TFTs that include dual-layer oxide-nitride dielectrics, and either hydrogenated amorphous and/or microcrystalline Si thin films for the channel, and source and drain regions. The emphasis is on the integrated processing of bottom-gate device structures, and on the way the electrical performance of the TFTs are correlated with the properties of the dielectric and semiconducting films, their included internal interfaces and the external exposed surfaces." @default.
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- W1963724805 date "1994-08-01" @default.
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- W1963724805 title "Integrated processing of amorphous and microcrystalline Si thin film transistors by plasma-assisted chemical-vapor deposition" @default.
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- W1963724805 doi "https://doi.org/10.1016/0167-9317(94)90033-7" @default.
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