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- W1963758811 abstract "The electrical characteristics of Cr / p – Si (100) Schottky barrier diodes have been measured in the temperature range of 100–300 K. The I-V analysis based on thermionic emission (TE) theory has revealed an abnormal decrease of apparent barrier height and increase of ideality factor at low temperature. The conventional Richardson plot exhibits non-linearity below 200 K with the linear portion corresponding to activation energy 0.304 eV and Richardson constant (A * ) value of 5.41×10 -3 Acm -2 K -2 is determined from the intercept at the ordinate of this experimental plot, which is much lower than the known value of 32 Acm -2 K -2 for p-type Si . It is demonstrated that these anomalies result due to the barrier height inhomogeneities prevailing at the metal-semiconductor interface. Hence, it has been concluded that the temperature dependence of the I-V characteristics of the Cr/p – Si Schottky barrier diode can be successfully explained on the basis of TE mechanism with a Gaussian distribution of the barrier heights. Furthermore, the value of the Richardson constant found is much closer than that obtained without considering the inhomogeneous barrier heights." @default.
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- W1963758811 date "2008-06-10" @default.
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- W1963758811 title "TEMPERATURE DEPENDENCE OF ELECTRICAL CHARACTERISTICS OF <font>Cr/p</font>–<font>Si</font>(100) SCHOTTKY BARRIER DIODES" @default.
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- W1963758811 doi "https://doi.org/10.1142/s0217979208039496" @default.
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