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• W1963808538 abstract "Abstract In order to obtain the detailed information on the conduction mechanisms of the Au/n-GaAs Schottky barrier diode (SBD), the current–voltage ( I – V ) characteristics were carried out in the temperature range of 80–340 K by the steps of 20 K. The ideality factor ( n ) decreases, while the effective barrier height (Φ Bo ) increases with increasing temperature (80–340 K). The semilogarithmic I – V curve is almost parallel for each temperature. Therefore, its slope and tunneling parameter ( E oo ) remained almost constant as independent of temperature with an average of 27.47 V −1 and 28.04 meV, respectively. Furthermore, the reverse saturation current ( I s ) ranges, indication that the charge transport mechanism in the Au/n-GaAs SBD is tunneling due to the weak temperature dependence of the I s . Thus, it can be said that the experimental I – V data quite well obey the thermionic field emission (TFE) model especially at low temperatures rather than the other transport mechanisms. On the other hand, an abnormal decrease in the Φ Bo and increase in the n with decreasing temperature have been observed which leads to non-linearity in the activation energy plots and a linear relationship between the barrier heights (BHs) and the ideality factors of the SBD. The high value of n especially at low temperatures cannot be also explained only TFE theory. Therefore, we tried to explain the non-ideal behavior of the forward-bias I – V characteristics in Au/n-GaAs SBD with the basis of a thermionic emission (TE) mechanism with a Gaussian distribution (GD) of the BHs. The obtained results show that the temperature dependence of forward bias I – V characteristics of the Au/n-GaAs SBD can be successfully explained in terms of the TE mechanism with a double GD of BHs for low bias region (LBR) and moderate bias region (MBR)." @default.
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• W1963808538 date "2013-05-01" @default.
• W1963808538 modified "2023-10-01" @default.
• W1963808538 title "A detailed study on current–voltage characteristics of Au/n-GaAs in wide temperature range" @default.
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• W1963808538 doi "https://doi.org/10.1016/j.sna.2013.02.018" @default.
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