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• W1963828102 abstract "Titanium dioxide films have been deposited using DC magnetron sputtering technique onto silicon substrates at an ambient temperature and at an oxygen partial pressure of 7 × 10 –5 mbar and sputtering pressure (Ar + O2) of 1 × 10 –3 mbar. The deposited films were calcinated at 673 and 773 K. The composition of the films as analyzed using Auger Electron Spectroscopy (AES) revealed the stoichiometry with an O and Ti ratio of 2.08. The influence of post-deposition calcination on the Raman scattering of the films was studied. The existence of Raman active modes A1g, B1g and Eg corresponding to the Raman shifts are reported in this paper. The improvement of crystallinity of the TiO2 films as shown by the Raman scattering studies has also been reported. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)" @default.
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• W1963828102 date "2005-03-01" @default.
• W1963828102 modified "2023-10-04" @default.
• W1963828102 title "Effect of calcination on the crystallinity of sputtered TiO2 thin films as studied by Raman scattering" @default.
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• W1963828102 doi "https://doi.org/10.1002/crat.200410329" @default.
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