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• W1963852761 abstract "An experimental and theoretical investigation of recoil implantation at elevated temperatures is presented. It is found that a radiation-induced solute flux away from the substrate/overlayer interface is effective in carrying implanted atoms out of the shallow surface layer. Under suitable circumstances, almost all the implant is though to be carried to greater depth in this way. The radiation-induced solute flux is produced by the migration of radiation-produced point-defects to the substrate surface. The presence of defects also contributes to solute migration through radiation-enhanced diffusion, but solute fluxes induced by segregation can be much larger than those due to diffusion. This is especially so when the bombarding species is a heavy ion, and in the region near the surface in which implanted atoms initially come to rest but where point-defect concentrations are low. These factors are illustrated by data on recoil implantation of aluminum into nickel using 75 keV Ni+ and 200 keV N+ bombarding ions." @default.
• W1963852761 created "2016-06-24" @default.
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• W1963852761 date "1981-04-01" @default.
• W1963852761 modified "2023-09-25" @default.
• W1963852761 title "Segregation-assisted recoil implantation" @default.
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• W1963852761 doi "https://doi.org/10.1016/0029-554x(81)90679-0" @default.
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