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• W1963875475 abstract "We studied the ferroelectric properties of GeTe and Ge2Sb2Te5 thin films through the analysis of capacitance-temperature, contact resonance piezoresponse force, resonance tracking piezoresponse force, and switching piezoresponse force microscopy measurements. These alloys are non-typical ferroelectric materials with low electrical resistivity, which makes their ferroelectric properties difficult to investigate by other conventional techniques. On the basis of measurement values of the Curie temperature, ferroelectric domain structure, piezoelectric coefficient d33, and coercive voltage were obtained. For the first time, hysteresis loops, and switching effects of domains under electrical field were observed in chalcogenide materials." @default.
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• W1963875475 date "2012-09-01" @default.
• W1963875475 modified "2023-09-26" @default.
• W1963875475 title "Characterization of local piezoelectric behavior of ferroelectric GeTe and Ge₂Sb₂Te₅ thin films" @default.
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• W1963875475 doi "https://doi.org/10.1063/1.4746087" @default.
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