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- W1963889061 abstract "Single crystal silicon wafers have been implanted by 5 x 10 16 cm -2 H + ions at an energy of 140 keV at room temperature. After cutting, the samples were annealed at temperatures ranging from 200 to 900 °C for 30 min and examined by Rutherford backscattering anti channeling spectroscopy, and cross-sectional transmission electron microscopy. The results indicate that the extended defects induced by high-dose H + implantation are stable below 400 °C. Annealed at temperatures higher than 450 °C, these complex defects can be reduced and most of the initial radiation damage converts into voids at 900 °C. Thermal treatment at T ≥ 450 °C produces blisters and flakes on the sample surface, resulting in the lattice distortion of the surface layer. The results have been interpreted by the assumption of the formation of H 2 and microbubbles at T ≥ 400 °C in high dose H + -implanted Si." @default.
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- W1963889061 date "1998-02-01" @default.
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- W1963889061 title "Annealing Behavior of Crystalline Si Implanted with High Dose of Protons" @default.
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- W1963889061 doi "https://doi.org/10.1002/(sici)1521-396x(199802)165:2<361::aid-pssa361>3.0.co;2-#" @default.
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