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- W1963920154 abstract "Chemical etching of Si, used in the preparation of clean, hydrogen-terminated Si surfaces, was found to inject hydrogen—leading to the passivation of acceptors at depths over 0.5 μm. This effect explains the ‘‘high’’ barrier heights, the nonlinear capacitance-voltage plots, and the nonuniform dopant profiles observed for metals deposited on unannealed, etched p-type substrates. Room-temperature metal deposition on atomically clean, well-annealed p-type substrates showed no changes in the active dopant profile, in disagreement with metal-acceptor complex mechanisms recently proposed." @default.
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- W1963920154 date "1993-05-31" @default.
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- W1963920154 title "Pitfalls in the measurement of metal/<i>p</i>-Si contacts: The effect of hydrogen passivation" @default.
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- W1963920154 doi "https://doi.org/10.1063/1.109215" @default.
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